Solar

Bulk

Silicon

 

SiOnyx’s laser texture provides an efficiency boost and lowers your dollar per watt cost by reducing surface reflectance and achieving tighter process controls. Further cost savings can be realized by migrating to thinner wafers with almost no loss in current due to superior light trapping.

Black Silicon

How It Works

SiOnyx’s proprietary process can be seamlessly dropped into existing cell manufacturing lines on top of isotexture or alkaline texture to further lower reflectance with a demonstrated absolute efficiency boost of 0.3-0.5%. For multicrystalline cells, the saw damage removal and texture steps can be decoupled by performing a deep acid polish etch and using SiOnyx single-sided laser texture. This is ideal for solar cell architectures that require a planar backside for passivation and local contacts.

 
Bulk Silicon Graph

SiOnyx’s laser texture process is fully compatible with both n- and p-type silicon, and is completely independent of crystal grain orientation. Furthermore, since it provides enhanced quantum efficiency in the red and near infrared portions of the solar spectrum, the process is complementary to existing selective emitter solutions that provide a current boost in the blue wavelengths.

 
Bulk Silicon GraphBulk Black Silicon Graph

 

Above: Standard 156mm multicrystalline silicon cells with screen printed contacts and aluminum back surface field. Cells were processed and tested at ISC Konstanz (Germany). SiOnyx laser texture provides a clear boost in current with no voltage degradation, resulting in enhanced efficiency. Additionally the process results in tighter efficiency binning.

 
 IsotextureAlkaline TextureSiOnyx Laser Texture
Decouple saw damage removal & texture processes to maximize Voc & JscNot separableCheck MarkCheck Mark
Low reflectance22+% refl. pre-ARCCheck MarkCheck Mark
Fast / inlineCheck MarkToo slow for inlineCheck Mark
Robust features, <1 μm heightDeep saw damage holesPyramids 3-10 μmCheck Mark
Consume <2 μm of silicon to form textureConsumes 4+ μmConsumes 10+ μmCheck Mark
Independent of grain orientationCheck MarkOnly suitable for (001) surfacesCheck Mark